PART |
Description |
Maker |
AM29BDD160G |
16 Megabit (1 M x 16-bit/512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
|
Advanced Micro Devices
|
S29CD016G0MFFA202 S29CD016G0MFAA212 S29CD016G0JFAI |
32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O 32兆位米32位)6兆位12k × 32的位),2.5伏,只有突发模式,双启动,同步读/写闪存与VersatileI内存/输出 32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O 32兆位米32位)6兆位512k × 32的位),2.5伏,只有突发模式,双启动,同步读/写闪存与VersatileI内存/输出 32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O 512K X 32 FLASH 2.7V PROM, 67 ns, PBGA80
|
Spansion Inc. Spansion, Inc.
|
CAT93C46AJ CAT93C46AJI CAT93C46AJI-2.5 CAT93C46AJ- |
72-Mbit QDR-II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) 72-Mbit QDR-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) 256K (32K x 8) Static RAM 256 Kb (256K x 1) Static RAM 72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency) Microwire Serial EEPROM 微型导线串行EEPROM
|
Atmel, Corp.
|
S29CD016G0JQFA212 S29CD032G0MFAA102 S29CD016G0MQAI |
32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O
|
SPANSION
|
AM42BDS6408HD3I AM42BDS6408HE3I M420000077 AM42BDS |
CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory, and 8 Mbit (512 K x 16-Bit) SRAM
|
SPANSION[SPANSION]
|
S29NS256N |
256/128/64 Megabit (16/8/4M x 16-bit), CMOS 1.8 Volt-only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory
|
SPANSION
|
S29CL016J0JDGH034 S29CL016J0MDGH137 S29CD016J0JDGH |
16 Megabit (512k x 32-Bit) CMOS 2.6 or 3.3 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
|
SPANSION[SPANSION]
|
S29NS-N07 |
256/128/64 Megabit (16/8/4M x 16-bit), CMOS 1.8 Volt-only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory
|
SPANSION
|
CY7C1543V18 CY7C1543V18-300BZC CY7C1543V18-300BZI |
72-Mbit QDR垄芒-II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) 72-Mbit QDR?II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
|
Cypress Semiconductor
|
S71WS-P S71WS512PC0HF3SR3 S71WS512PC0HF3SR2 S71WS5 |
1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM 1.8伏只x16同步写,突发模式CellularRAM的闪存记忆体 1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM SPECIALTY MEMORY CIRCUIT, PBGA84
|
Spansion Inc. Spansion, Inc.
|
CY7C1176V18-333BZXC CY7C1176V18-333BZXI CY7C1165V1 |
18-Mbit QDR垄芒-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 18-Mbit QDR??II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 18-Mbit QDR?II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
|
Cypress Semiconductor
|